Definitions for Mosfet
mos·fet

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1. MOSFET

   The metal–oxide–semiconductor field-effect transistor (MOSFET, MOS-FET, or MOS FET) is a type of field-effect transistor (FET), most commonly fabricated by the controlled oxidation of silicon. It has an insulated gate, the voltage of which determines the conductivity of the device. This ability to change conductivity with the amount of applied voltage can be used for amplifying or switching electronic signals. A metal-insulator-semiconductor field-effect transistor (MISFET) is a term almost synonymous with MOSFET. Another synonym is IGFET for insulated-gate field-effect transistor. The basic principle of the field-effect transistor was first patented by Julius Edgar Lilienfeld in 1925. The main advantage of a MOSFET is that it requires almost no input current to control the load current, when compared with bipolar transistors (bipolar junction transistors/BJTs). In an enhancement mode MOSFET, voltage applied to the gate terminal increases the conductivity of the device. In depletion mode transistors, voltage applied at the gate reduces the conductivity.The "metal" in the name MOSFET is sometimes a misnomer, because the gate material can be a layer of polysilicon (polycrystalline silicon). Similarly, "oxide" in the name can also be a misnomer, as different dielectric materials are used with the aim of obtaining strong channels with smaller applied voltages. The MOSFET is by far the most common transistor in digital circuits, as billions may be included in a memory chip or microprocessor. Since MOSFETs can be made with either p-type or n-type semiconductors, complementary pairs of MOS transistors can be used to make switching circuits with very low power consumption, in the form of CMOS logic.

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1. MOSFET

   The metal–oxide–semiconductor field-effect transistor is a transistor used for amplifying or switching electronic signals. Although the MOSFET is a four-terminal device with source, gate, drain, and body terminals, the body of the MOSFET often is connected to the source terminal, making it a three-terminal device like other field-effect transistors. Because these two terminals are normally connected to each other internally, only three terminals appear in electrical diagrams. The MOSFET is by far the most common transistor in both digital and analog circuits, though the bipolar junction transistor was at one time much more common. In enhancement mode MOSFETs, a voltage drop across the oxide induces a conducting channel between the source and drain contacts via the field effect. The term "enhancement mode" refers to the increase of conductivity with increase in oxide field that adds carriers to the channel, also referred to as the inversion layer. The channel can contain electrons, or holes, opposite in type to the substrate, so nMOS is made with a p-type substrate, and pMOS with an n-type substrate. In the less common depletion mode MOSFET, detailed later on, the channel consists of carriers in a surface impurity layer of opposite type to the substrate, and conductivity is decreased by application of a field that depletes carriers from this surface layer.

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Numerology

1. Chaldean Numerology

   The numerical value of Mosfet in Chaldean Numerology is: 4

2. Pythagorean Numerology

   The numerical value of Mosfet in Pythagorean Numerology is: 6

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References

1. ^ Wikipedia
   https://en.wikipedia.org/wiki/Mosfet
2. ^ Wikidata
   https://www.wikidata.org/w/index.php?search=Mosfet